Front-matter_2017_Advances-in-Semiconductor-Nanostructures

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Advances in Semiconductor
Nanostructures
Advances in Semiconductor
Nanostructures
Growth, Characterization, Properties
and Applications
Edited by
Alexander V. Latyshev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the
Russian Academy of Sciences, Novosibirsk, Russia
Novosibirsk State University, Novosibirsk, Russia
Anatoliy V. Dvurechenskii
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the
Russian Academy of Sciences, Novosibirsk, Russia
Novosibirsk State University, Novosibirsk, Russia
Alexander L. Aseev
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the
Russian Academy of Sciences, Novosibirsk, Russia
AMSTERDAM • BOSTON • HEIDELBERG • LONDON
NEW YORK • OXFORD • PARIS • SAN DIEGO
SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO
	Advances in Semiconductor Nanostructures
	Advances in Semiconductor Nanostructures